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Titolo:
Application of tight-binding and path probability methods to the junction relaxation of semiconductor heterostructures
Autore:
Masuda-Jindo, K; Kikuchi, R; Nishitani, SR;
Indirizzi:
Tokyo Inst Technol, Dept Mat Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol Yokohama Kanagawa Japan 2268503 anagawa 2268503, Japan Univ Calif Berkeley, Berkeley, CA 94720 USA Univ Calif Berkeley Berkeley CA USA 94720 erkeley, Berkeley, CA 94720 USA Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan Kyoto Univ Kyoto Japan 6068501 ci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Titolo Testata:
JOURNAL OF PHASE EQUILIBRIA
fascicolo: 4, volume: 22, anno: 2001,
pagine: 451 - 456
SICI:
1054-9714(200108)22:4<451:AOTAPP>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; STRAIN; SUPERLATTICES; ALLOYS; SCATTERING; ISLANDS; SI(001); LAYERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Masuda-Jindo, K Tokyo Inst Technol, Dept Mat Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol Yokohama Kanagawa Japan 2268503 Japan
Citazione:
K. Masuda-Jindo et al., "Application of tight-binding and path probability methods to the junction relaxation of semiconductor heterostructures", J PH EQUIL, 22(4), 2001, pp. 451-456

Abstract

The atomistic and thermodynamic properties of semiconductor heterostructures are investigated by using the tight-binding (TB) electronic theory and path probability method (PPM). The atomic diffusion in the semiconductor interface is studied via the vacancy mechanism of diffusion using the nonequilibrium irreversible statistical mechanical approach, PPM. The effective pair interaction energies between the constituent atoms are derived by using the zeros-poles method, taking into account the misfit strains at the interface. We study the junction relaxation processes of semiconductor heterostructures such as SiGe/Si(001), GaAs/Si(001), and ZnSe/GaAs(001) systems. It has been found that the junction relaxation exhibits characteristic features, e.g., overshooting and uphill diffusion along the chemical potential gradient depending on the temperature and relative magnitude of effective pair interaction energies. It is also shown that, even for the very early stage of the junction relaxation, the interface electronic properties are strongly influenced by the interface disorder.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 14:00:01