Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Formation of rough GaN surface by hydrogen plasma treatment and its application to field emitter
Autore:
Sugino, T; Hori, T; Kimura, C; Yamamoto, T;
Indirizzi:
Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan Osaka Univ SuitaOsaka Japan 5650871 ct Engn, Suita, Osaka 5650871, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 3B, volume: 40, anno: 2001,
pagine: L245 - L248
SICI:
0021-4922(20010315)40:3B<L245:FORGSB>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
NEGATIVE ELECTRON-AFFINITY; BORON-NITRIDE FILMS; EMISSION CHARACTERISTICS; CATHODES; ARRAYS;
Keywords:
GaN; hydrogen plasma; etching; cold cathode; field emission;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Sugino, T Osaka Univ, Dept Elect Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan Osaka Univ 2-1 Yamadaoka Suita Osaka Japan 5650871 650871, Japan
Citazione:
T. Sugino et al., "Formation of rough GaN surface by hydrogen plasma treatment and its application to field emitter", JPN J A P 2, 40(3B), 2001, pp. L245-L248

Abstract

N-type GaN layers doped with Si are grown on sapphire substrates with AIN buffer layers by the metalorganic chemical vapor deposition method. The electron density is 2 x 10(17) cm(-3). The GaN surface is treated with hydrogen (H-2) plasma produced by supplying microwave power. Etching of GaN with H-2 plasma leads to the formation of a roughened GaN surface. An enhancementof the electric field at the roughened surface makes it possible to reducethe average electric field between the anode electrode and the sample surface for electron emission. The turn-on electric field for the electron emission is estimated to be as low as 12.4 V/mum.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/03/20 alle ore 19:39:32