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Titolo:
Effect of temperature and illumination on the instability of a-Si : H thin-film transistors under AC gate bias stress
Autore:
Huang, CY; Teng, TH; Yang, CJ; Tseng, CH; Cheng, HC;
Indirizzi:
Natl Chiao Tung Univ, Semicond Res Ctr, Dept Elect Engn, Hsinchu 300, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan 300 Elect Engn, Hsinchu 300, Taiwan Natl Chiao Tung Univ, Semicond Res Ctr, Inst Elect, Hsinchu 300, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan 300 Inst Elect, Hsinchu 300, Taiwan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 4A, volume: 40, anno: 2001,
pagine: L316 - L318
SICI:
0021-4922(20010401)40:4A<L316:EOTAIO>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; METASTABLE DEFECTS;
Keywords:
a-Si : H TFTs; AC; bias-temperature-stress; bias-illumination-stress;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Cheng, HC Natl Chiao Tung Univ, Semicond Res Ctr, Dept Elect Engn, Hsinchu300, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan 300 n, Hsinchu 300, Taiwan
Citazione:
C.Y. Huang et al., "Effect of temperature and illumination on the instability of a-Si : H thin-film transistors under AC gate bias stress", JPN J A P 2, 40(4A), 2001, pp. L316-L318

Abstract

This work investigates the temperature and illumination effects on the a-SM thin-film transistors (a-SiH TFTs) under AC gate bias stress to find the larger threshold voltage shift and subthreshold swing change for the bias-temperature-stress (BTS) and bias-illumination-stress (BIS). Excess carriersfrom thermal-generation electron-hole pairs or photoexcited electron-hole pairs may significantly influence the instability of a-SM TFTs during bias stress. The instability mechanisms originate from the carrier-induced defect Creation enhanced by thermal generation in the BTS case and also emphasized by photoexcitation for the BIS case. Both stress conditions will induce a larger threshold voltage shift and higher cutoff frequency than those forsimple bias stresses.

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Documento generato il 30/11/20 alle ore 12:11:12