Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals
Autore:
Su, YK; Chiou, YZ; Juang, FS; Chang, SJ; Sheu, JK;
Indirizzi:
Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan Natl Cheng Kung Univ Tainan Taiwan 70101 lect Engn, Tainan 70101, Taiwan Natl Huwei Inst Technol, Dept Electroopt Engn, Huwei 63208, Yunlin, TaiwanNatl Huwei Inst Technol Huwei Yunlin Taiwan 63208 i 63208, Yunlin, Taiwan Natl Cent Univ, Inst Opt Sci, Taipei, Taiwan Natl Cent Univ Taipei Taiwan tl Cent Univ, Inst Opt Sci, Taipei, Taiwan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4B, volume: 40, anno: 2001,
pagine: 2996 - 2999
SICI:
0021-4922(200104)40:4B<2996:GAIMPW>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
SINGLE-CRYSTAL GAN; I-N PHOTODIODES; ULTRAVIOLET DETECTION; LOW-NOISE; ALGAN;
Keywords:
GaN; photodetector; MSM; Schottky;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Su, YK Natl Cheng Kung Univ, Dept Elect Engn, 1 Univ Rd, Tainan 70101, Taiwan Natl Cheng Kung Univ 1 Univ Rd Tainan Taiwan 70101 n 70101, Taiwan
Citazione:
Y.K. Su et al., "GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals", JPN J A P 1, 40(4B), 2001, pp. 2996-2999

Abstract

The characterizations of n-type doped GaN, p-type doped GaN and n-type doped In0.2Ga0.8N Schottky metal-semiconductor-metal (MSM) photodetectors werereported. The epilayers were grown on sapphire by metalorganic chemical vapor deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni and Pt metals. The dark and illuminated current-voltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied. The n-GaN MSM photodetectors with Au Schottky contacts showed better responsivity than those with other metals and they ere also better than Au/p-GaN and Ti/n-In(0.2)G(0.8)N MSMs. The effects of the pitch width between theinterdigitate fingers and the thickness of Schottky metals on the characteristics of photocurrents were also studied.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/01/20 alle ore 20:55:01