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Titolo:
Characteristics of tunneling nitride grown by electron cyclotron resonancenitrogen-plasma nitridation and its application to low-voltage electrical erasable-programmable read-only memory
Autore:
Min, KS; Chung, JY; Lee, K;
Indirizzi:
Hyundai Elect Ind Co Ltd, Adv DRAM Design Dept, Hungduk Gu, Cheongju 361725, South Korea Hyundai Elect Ind Co Ltd Cheongju South Korea 361725 361725, South Korea Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusong Gu, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 5701, South Korea
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4B, volume: 40, anno: 2001,
pagine: 2963 - 2968
SICI:
0021-4922(200104)40:4B<2963:COTNGB>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; VLSI;
Keywords:
tunneling insulator; ECR; nitridation; low-voltage programming; EEPROM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Min, KS Hyundai Elect Ind Co Ltd, Adv DRAM Design Dept, Hungduk Gu, 1 Hyangjeong Dong, Cheongju 361725, South Korea Hyundai Elect Ind Co Ltd 1 Hyangjeong Dong Cheongju South Korea 361725
Citazione:
K.S. Min et al., "Characteristics of tunneling nitride grown by electron cyclotron resonancenitrogen-plasma nitridation and its application to low-voltage electrical erasable-programmable read-only memory", JPN J A P 1, 40(4B), 2001, pp. 2963-2968

Abstract

Characteristics of a tunneling-nitride insulator grown by low-temperature electron cyclotron resonance (ECR) nitrogen-plasma nitridation are presented. The ECR nitridation shows a very high growth rate at lower temperatures and the thickness is proportional to the growth time. For example, we obtain a thickness of 16 [nm] and a refractive index of 1.75 after the nitridation time of 80 [min] at 400 degreesC. The barrier heights measured from the Fowler-Nordheim (F-N) tunneling current are 2.3 [eV] and 1.4 [eV] in the inversion and the accumulation modes, respectively. These lower heights allowus much faster programming and erasing times of an electrical erasable-programmable read-only memory (EEPROM) with the ECR nitride than those of the conventional EEPROM with the thermal oxide. A double-gate EEPROM with an ECR-nitride tunneling insulator was fabricated. Surprisingly, it does not show any threshold voltage (V-TH) degradation even after 100,000 cycles of programming and erasing.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/01/20 alle ore 18:46:45