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Titolo:
A new sample structure for position-controlled giant-grain growth of silicon using phase-modulated excimer-laser annealing
Autore:
Yoshimoto, S; Oh, CH; Matsumura, M;
Indirizzi:
Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan TokyoInst Technol Tokyo Japan 1528550 , Meguro Ku, Tokyo 1528550, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 7, volume: 40, anno: 2001,
pagine: 4466 - 4469
SICI:
0021-4922(200107)40:7<4466:ANSSFP>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI FILMS; CRYSTALLIZATION METHOD; THIN-FILMS; SOLIDIFICATION; TFTS;
Keywords:
poly-Si; excimer laser annealing; lateral grain growth; single grain; thin-film transistor; organic silica; SOG;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Yoshimoto, S Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528550, Japan Tokyo Inst Technol 2-12-1 Ookayama Tokyo Japan 1528550 Japan
Citazione:
S. Yoshimoto et al., "A new sample structure for position-controlled giant-grain growth of silicon using phase-modulated excimer-laser annealing", JPN J A P 1, 40(7), 2001, pp. 4466-4469

Abstract

A new sample structure has been proposed for position-controlled growth ofgiant Si grains by a phase-modulated excimer-laser annealing method. The sample consists of a layered structure with an organic silica underlayer at the bottom for reducing the heat removal rate from the Si layer placed on it, and a thick silica capping-layer on the top, for enlarging the amount ofexcess stored heat. These layers effectively elongated the grain growth time, resulting in the long lateral grain growth to 24 mum. In addition, a sample having a buried silica island array in the Si layer has also been proposed for achieving two-dimensional position control, where the island determines the starting position of the lateral grain growth. By combining thesetechnologies, we have grown single crystals of Si grains as large as 12 mum at pre-designated positions by single-shot irradiation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 23:44:28