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Titolo:
The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)
Autore:
Alferov, ZI;
Indirizzi:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 t Petersburg 194021, Russia
Titolo Testata:
CHEMPHYSCHEM
fascicolo: 8-9, volume: 2, anno: 2001,
pagine: 500 -
SICI:
1439-4235(20010817)2:8-9<500:TDHTCA>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; QUANTUM-DOT LASER; ROOM-TEMPERATURE; THRESHOLD CURRENT; SUPER-LATTICES; INJECTION-LASER; DIODE-LASER; SEMICONDUCTOR; SUPERLATTICE;
Keywords:
devices; electronics; heterostructures; semiconductors; solid state;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
145
Recensione:
Indirizzi per estratti:
Indirizzo: Alferov, ZI Russian Acad Sci, AF Ioffe Physicotech Inst, 26 Politechnicheskaya, St Petersburg 194021, Russia Russian Acad Sci 26 Politechnicheskaya St Petersburg Russia 194021
Citazione:
Z.I. Alferov, "The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)", CHEMPHYSCHE, 2(8-9), 2001, pp. 500

Abstract

The "magic" mixture of AlGaAs was found in researchers in St. Petersburg and gave this group, headed by Alferov, a strong position in the implementation of solid-state optoelectronics, such as the laser shown in the picture,and its leader a share of The Double Heterostructure: the 2000 Nobel prizefor Physics. New technological developments-single-electron devices and ever-lower threshold currents for example-are also described.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 20:41:05