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Titolo:
Quasi-electric fields and band offsets: Teaching electrons new tricks (Nobel lecture)
Autore:
Kroemer, H;
Indirizzi:
Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA Univ CalifSanta Barbara Santa Barbara CA USA 93106 Barbara, CA 93106 USA
Titolo Testata:
CHEMPHYSCHEM
fascicolo: 8-9, volume: 2, anno: 2001,
pagine: 490 -
SICI:
1439-4235(20010817)2:8-9<490:QFABOT>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
HETEROSTRUCTURE BIPOLAR-TRANSISTORS; STAGGERED-LINEUP HETEROJUNCTIONS; BELOW-GAP RADIATION; ON-NONPOLAR EPITAXY; SEMICONDUCTOR HETEROJUNCTION; GROWTH; GAAS; SI;
Keywords:
devices; electronics; heterostructures; semiconductors; solid state;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
49
Recensione:
Indirizzi per estratti:
Indirizzo: Kroemer, H Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara Santa Barbara CA USA 93106 93106 USA
Citazione:
H. Kroemer, "Quasi-electric fields and band offsets: Teaching electrons new tricks (Nobel lecture)", CHEMPHYSCHE, 2(8-9), 2001, pp. 490

Abstract

It took a generation to catch up with the proposals of Kroemer on semiconductor structures. The principles and practises, for which he won a share ofthe 2000 Nobel prize for Physics, are described here. The double heterostructure, in which both electrons and holes are pushed into the interface to combine, is a core technology for the now-common solid-state laser; its energy band diagram is shown in the picture.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 18:54:50