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Titolo:
Annealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin films
Autore:
Lee, JY; Juang, JY; Wu, KH; Uen, TM; Gou, YS;
Indirizzi:
Natl Chiao Tung Univ, Dept Electrophys, Hsinchu, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan , Dept Electrophys, Hsinchu, Taiwan
Titolo Testata:
SURFACE SCIENCE
fascicolo: 3, volume: 488, anno: 2001,
pagine: 277 - 285
SICI:
0039-6028(20010810)488:3<277:ACOPLD>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
ENERGY ELECTRON-DIFFRACTION; ATOMIC-FORCE MICROSCOPY; CRYSTAL-SURFACE; GROWTH MODE; RHEED; MBE; OSCILLATIONS; EPITAXY;
Keywords:
epitaxy; growth; reflection high-energy electron diffraction (RHEED); atomic force microscopy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, JY Natl Chiao Tung Univ, Dept Electrophys, Hsinchu, Taiwan Natl ChiaoTung Univ Hsinchu Taiwan lectrophys, Hsinchu, Taiwan
Citazione:
J.Y. Lee et al., "Annealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin films", SURF SCI, 488(3), 2001, pp. 277-285

Abstract

The homoepitaxial growth of SrTiO3 (STO) films on as-polished STO(1 0 0) substrates by pulsed laser deposition has been exploited in detail. The intimate correlation between the surface step edge density and reflection high-energy electron diffraction (RHEED) intensity is clearly demonstrated by measuring the relation between the initial RHEED intensity drop and laser repetition rates. Systematic in situ annealing schemes were performed to investigate the film growth mechanisms. The results indicate that the two or three level growth May have occurred during some annealing schemes and can be interpreted by Stoyanov's step edge density model. Complementary atomic force microscopy investigations of the film surfaces further tend direct support to the RHEED intensity observations. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 31/03/20 alle ore 22:45:39