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Titolo:
Domain configuration and interface structure analysis of sol-gel-derived PZT ferroelectric thin films
Autore:
Liu, D; Wang, C; Zhang, HX; Li, JW; Zhao, LC; Bai, CL;
Indirizzi:
Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci Beijing Peoples R China 100080 100080, Peoples R China Harbin Inst Technol, Sch Sci, Harbin 150006, Peoples R China Harbin Inst Technol Harbin Peoples R China 150006 50006, Peoples R China Harbin Inst Technol, Sch Mat Sci, Harbin 150006, Peoples R China Harbin Inst Technol Harbin Peoples R China 150006 50006, Peoples R China
Titolo Testata:
SURFACE AND INTERFACE ANALYSIS
fascicolo: 1, volume: 32, anno: 2001,
pagine: 27 - 31
SICI:
0142-2421(200108)32:1<27:DCAISA>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
FORCE MICROSCOPY; PB(ZR,TI)O-3; FATIGUE; CAPACITORS; PBTIO3;
Keywords:
AFM; ferroelectric thin films; PZT; domain;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Bai, CL Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci Beijing Peoples R China 100080 Peoples R China
Citazione:
D. Liu et al., "Domain configuration and interface structure analysis of sol-gel-derived PZT ferroelectric thin films", SURF INT AN, 32(1), 2001, pp. 27-31

Abstract

The domain configuration and interfacial structure of sol-gel-derived PZT thin films were evaluated using atomic force microscopy and x-ray photoelectron spectroscopy. Microstructure and ferroelectric property investigation of the PZT thin films under repeated a.c. field suggests that microcracks may be the major cause for ferroelectric fatigue. The intersection of 90 degrees domain walls, where the concentration of stress occurs, is likely to be the origin of microcracks. In addition, the entrapment of defects at domain walls, grain boundaries and/or PZT/electrode interface due to relativelylower potential energy at these sites results in an internal field with a direction opposite to the applied field, which weakens the electric field intensity in the PZT thin films. A fraction of the domains is pinned and finally results in polarization fatigue of the PZT thin films. Copyright (C) 2001 John Wiley & Sons, Ltd.

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Documento generato il 01/12/20 alle ore 01:09:29