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Titolo:
Effects of substrate bias voltage on plasma parameters in temperature control using a grid system
Autore:
Bai, KH; Hong, JI; You, SJ; Chang, HY;
Indirizzi:
Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 5701, South Korea Samsung Elect, Seoul, South Korea Samsung Elect Seoul South KoreaSamsung Elect, Seoul, South Korea
Titolo Testata:
PHYSICS OF PLASMAS
fascicolo: 9, volume: 8, anno: 2001,
pagine: 4246 - 4250
SICI:
1070-664X(200109)8:9<4246:EOSBVO>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCTIVELY-COUPLED PLASMA; CYCLOTRON-RESONANCE PLASMA; ION ENERGY; ELECTRON; DISCHARGE; DIAGNOSTICS; RADICALS; REACTOR; SIO2;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Bai, KH Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 uth Korea
Citazione:
K.H. Bai et al., "Effects of substrate bias voltage on plasma parameters in temperature control using a grid system", PHYS PLASMA, 8(9), 2001, pp. 4246-4250

Abstract

In this paper we investigate the effects of substrate bias voltage on plasma parameters in temperature control using a grid system in inductively coupled plasma. Electron temperature can be controlled from 2.5 eV to 0.5 eV at 1 mTorr Ar plasma using grid bias voltage, and the electron temperature is a strong function of substrate bias voltage. The main control parameter determining the electron temperature is the potential difference between grid-biased voltage and the plasma potential in the temperature controlled region (Delta phi (II,g)). When substrate bias voltage is negative, plasma parameters do not vary with substrate bias voltage due to constant Delta phi (II,g) (C) 2001 American Institute of Physics.

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Documento generato il 30/11/20 alle ore 19:50:16