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Titolo:
Properties of the strongly correlated two-dimensional electron gas in Si MOSFET's - art. no. 085317
Autore:
Spivak, B;
Indirizzi:
Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington SeattleWA USA 98195 on, Dept Phys, Seattle, WA 98195 USA
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 8, volume: 6408, anno: 2001,
pagine: 5317 -
SICI:
0163-1829(20010815)6408:8<5317:POTSCT>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
METAL-INSULATOR-TRANSITION; 2 DIMENSIONS; MAGNETIC-FIELD; PHASE-TRANSITIONS; CONDUCTING PHASE; SYSTEMS; GLASS; STATE; HE-3; B=0;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
52
Recensione:
Indirizzi per estratti:
Indirizzo: Spivak, B Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington Seattle WA USA 98195 hys, Seattle, WA 98195 USA
Citazione:
B. Spivak, "Properties of the strongly correlated two-dimensional electron gas in Si MOSFET's - art. no. 085317", PHYS REV B, 6408(8), 2001, pp. 5317

Abstract

We discuss properties of the strongly correlated two-dimensional electron gas in Si metal-oxide-semiconductor field-effect transistor at low concentrations assuming that the electron liquid is close to crystallization. Analogy with the theory of He-3 is emphasized.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/04/20 alle ore 19:02:52