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Titolo:
Compensation mechanism for N acceptors in ZnO - art. no. 085120
Autore:
Lee, EC; Kim, YS; Jin, YG; Chang, KJ;
Indirizzi:
Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 5701, South Korea
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 8, volume: 6408, anno: 2001,
pagine: 5120 -
SICI:
0163-1829(20010815)6408:8<5120:CMFNAI>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIFFERENCE-PSEUDOPOTENTIAL METHOD; ZINC-OXIDE; FIRST-PRINCIPLES; THIN-FILMS; NITROGEN ACCEPTORS; NATIVE DEFECTS; ZNSE; GROWTH; BEAM; MBE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
32
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, EC Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 uth Korea
Citazione:
E.C. Lee et al., "Compensation mechanism for N acceptors in ZnO - art. no. 085120", PHYS REV B, 6408(8), 2001, pp. 5120

Abstract

We present a mechanism for the compensation of N acceptors in ZnO through real-space multigrid electronic structure calculations within the local-density-functional approximation. We find that at low N doping levels using a normal N-2 source, O vacancies are the main compensating donors for N acceptors, while N acceptors are compensated via the formation of defect complexes with Zn antisites at high doping levels, When an active plasma N-2 gas is used to increase the N solubility, N acceptors are still greatly compensated by N-2 molecules at oxygen sites and N-acceptor-N-2 complexes, explaining the difficulty in achieving low-resistivity p-type ZnO.

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Documento generato il 30/03/20 alle ore 00:09:57