Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy
Autore:
McKay, HA; Feenstra, RM; Schmidtling, T; Pohl, UW; Geisz, JF;
Indirizzi:
Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA Carnegie Mellon Univ Pittsburgh PA USA 15213 ys, Pittsburgh, PA 15213 USA Tech Univ Berlin, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 Berlin, D-10623 Berlin, Germany Natl Renewable Energy Lab, Golden, CO 80401 USA Natl Renewable Energy LabGolden CO USA 80401 y Lab, Golden, CO 80401 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 4, volume: 19, anno: 2001,
pagine: 1644 - 1649
SICI:
1071-1023(200107/08)19:4<1644:DONAID>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; BAND-GAP; PHOTOLUMINESCENCE; GAAS1-XNX; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Feenstra, RM Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA Carnegie Mellon Univ Pittsburgh PA USA 15213 h, PA 15213 USA
Citazione:
H.A. McKay et al., "Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy", J VAC SCI B, 19(4), 2001, pp. 1644-1649

Abstract

Nitrogen atoms in the cleaved (110) surfaces of dilute GaAsN and InGaAsN alloys have been studied using cross-sectional scanning tunneling microscopy. The distribution of nitrogen atoms in GaAs0.983N0.017 and In0.04Ga0.96As0.09N0.01 alloys is found to be in agreement with random statistics, with the exception of a small enhancement in the number of [001]-oriented nearest-neighbor pairs. The effects of annealing on In0.04Ga0.96As0.99N0.01 alloys has been studied by scanning tunneling spectroscopy. Spectra display a reduced band gap compared to GaAs but little difference is seen between as-grown versus annealed InGaAsN samples. In addition, voltage dependent imaging has been used to investigate second-plane nitrogen atoms. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 21:29:01