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Titolo:
Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation
Autore:
Guo, SP; Zhou, X; Maksimov, O; Tamargo, MC; Chi, C; Couzis, A; Maldarelli, C; Kuskovsky, IL; Neumark, GF;
Indirizzi:
CUNY City Coll, Dept Chem, CASI, NY State Ctr Adv Technol Photon Mat & Applicat, New York, NY 10031 USA CUNY City Coll New York NY USA 10031 t & Applicat, New York, NY 10031 USA CUNY City Coll, Dept Chem Engn, New York, NY 10031 USA CUNY City Coll NewYork NY USA 10031 pt Chem Engn, New York, NY 10031 USA Columbia Univ, Sch Mines, New York, NY 10027 USA Columbia Univ New York NY USA 10027 iv, Sch Mines, New York, NY 10027 USA Columbia Univ, Dept Appl Phys, New York, NY 10027 USA Columbia Univ New York NY USA 10027 ept Appl Phys, New York, NY 10027 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 4, volume: 19, anno: 2001,
pagine: 1635 - 1639
SICI:
1071-1023(200107/08)19:4<1635:EOBOTI>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; ISLAND FORMATION; SURFACE; ZNSE; HETEROSTRUCTURES; REDUCTION; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Guo, SP EMCORE Corp, 394 Elizabeth Ave, Somerset, NJ 08873 USA EMCORE Corp394 Elizabeth Ave Somerset NJ USA 08873 , NJ 08873 USA
Citazione:
S.P. Guo et al., "Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation", J VAC SCI B, 19(4), 2001, pp. 1635-1639

Abstract

The effects of Be on the II-VI/GaAs interface and on CdSe quantum dot (QD)formation were investigated. A (1 X 2) surface reconstruction was observedafter a Be-Zn coirradiation of the (0 0 1) GaAs (2 X 4) surface. ZnBeSe epilayers grown after the Be-Zn coirradiation show very high crystalline quality with x-ray rocking curve linewidths down to 23 arcsec and a low etch pit density of 4 X 10(4) cm(-2), and good optical quality with a band-edge photoluminescence (PL) emission peak linewidth of 2.5 meV at 13 K. However, ZnBeSe epilayers grown after Zn irradiation alone have poor crystalline quality and poor optical properties. Atomic force microscopy measurements show that CdSe QDs grown on ZnBeSe have higher density and smaller size than those grown on ZnSe. A narrower PL emission peak with higher emission energy was observed for the CdSe QDS sandwiched by ZnBeSe. These results indicate that the formation of CdSe QDs as well as the II-VI/GaAs interface are modified by the presence of Be. (C) 2001 American Vacuum Society.

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Documento generato il 26/09/20 alle ore 04:33:54