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Titolo:
Surface passivation of GaAs using an ultrathin cubic GaN interface controllayer
Autore:
Anantathanasarn, S; Hasegawa, H;
Indirizzi:
Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 0608628,Japan Hokkaido Univ Sapporo Hokkaido Japan 0608628 poro, Hokkaido 0608628,Japan Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan Hokkaido Univ Sapporo Hokkaido Japan 0608628 oro, Hokkaido 0608628, Japan
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 4, volume: 19, anno: 2001,
pagine: 1589 - 1596
SICI:
1071-1023(200107/08)19:4<1589:SPOGUA>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
INSULATOR-SEMICONDUCTOR; SI; DEFECTS; OXIDE; MBE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Hasegawa, H Hokkaido Univ, Res Ctr Interface Quantum Elect, North 13,West 8, Sapporo, Hokkaido 0608628, Japan Hokkaido Univ North 13,West 8 Sapporo Hokkaido Japan 0608628 n
Citazione:
S. Anantathanasarn e H. Hasegawa, "Surface passivation of GaAs using an ultrathin cubic GaN interface controllayer", J VAC SCI B, 19(4), 2001, pp. 1589-1596

Abstract

An attempt was made to passivate the GaAs surface by a Si3N4/c-GaN/GaAs passivation structure, having an ultrathin cubic GaN as an interface control layer (ICL) with a wide energy gap. The GaN ICL was formed by direct nitridation of GaAs with active nitrogen radical species in a molecular beam epitaxy (MBE) chamber. A detailed in situ x-ray photoelectron spectroscopy study confirmed formation of 1 or 2 monolayers of pseudomorphic cubic GaN layer. A remarkable increase of the quantum efficiency of photoluminescence (PL)by a factor of 30 was obtained by forming the passivation structure on theMBE grown clean (001) GaAs under optimum conditions. This indicates a large reduction of the surface recombination velocity. The increase of the PL intensity was extremely stable, maintaining its value even after leaving thesample in air for 2 months. Detailed ultrahigh vacuum contactless capacitance-voltage (C-V) measurements and usual metal-insulator-semiconductor C-V measurement indicated reduction of interface states, realizing a wide movement of the Fermi level within the midgap region. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/03/20 alle ore 10:13:04