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Titolo:
GaAs-substrate-based long-wave active materials with type-II band alignments
Autore:
Johnson, SR; Chaparro, S; Wang, J; Samal, N; Cao, Y; Chen, ZB; Navarro, C; Xu, J; Yu, SQ; Smith, DJ; Guo, CZ; Dowd, P; Braun, W; Zhang, YH;
Indirizzi:
Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA ArizonaState Univ Tempe AZ USA 85287 tate Elect Res, Tempe, AZ 85287 USA Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA Arizona State Univ Tempe AZ USA 85287 ept Elect Engn, Tempe, AZ 85287 USA Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA Arizona StateUniv Tempe AZ USA 85287 olid State Sci, Tempe, AZ 85287 USA Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA Arizona State Univ Tempe AZ USA 85287 Phys & Astron, Tempe, AZ 85287 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 4, volume: 19, anno: 2001,
pagine: 1501 - 1504
SICI:
1071-1023(200107/08)19:4<1501:GLAMWT>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Johnson, SR Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287USA Arizona State Univ Tempe AZ USA 85287 es, Tempe, AZ 85287 USA
Citazione:
S.R. Johnson et al., "GaAs-substrate-based long-wave active materials with type-II band alignments", J VAC SCI B, 19(4), 2001, pp. 1501-1504

Abstract

The optimized growth conditions and evidence for type-II alignment in GaAsSb/InGaAs heterostructures are reported. The asymmetric GaAsSb/InGaAs bilayer quantum well grown on GaAs shows promising results for device applications around the wavelength of 1.3 mum. Uncompensated type-II GaAs/GaAsSb/GaAsquantum-well systems and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP quantum-well systems are compared for 1.3 mum applications. Inhomogeneous photoluminescence-linewidth broadening due to lateral composition and thickness variation is reduced from 74 to 40 meV when GaAsP strain-compensation layers are added to GaAsSb-based trilayer quantum-well systems, (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/04/20 alle ore 22:33:53