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Titolo:
Fabrication of photonic quantum ring laser using chemically assisted ion beam etching
Autore:
Kim, JY; Kwak, KS; Kim, JS; Kang, B; Kwon, O;
Indirizzi:
Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Hyoja Dong, Kyungpook,South Korea Pohang Univ Sci & Technol Hyoja Dong Kyungpook South Korea k,South Korea Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA Univ Calif Los Angeles Los Angeles CA USA 90095 Los Angeles, CA 90095 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 4, volume: 19, anno: 2001,
pagine: 1334 - 1338
SICI:
1071-1023(200107/08)19:4<1334:FOPQRL>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
MICRODISK LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Kang, B Pohang Univ Sci & Technol, Dept Elect & Elect Engn, San 31, Hyoja Dong, Kyungpook, South Korea Pohang Univ Sci & Technol San 31 Hyoja Dong Kyungpook South Korea
Citazione:
J.Y. Kim et al., "Fabrication of photonic quantum ring laser using chemically assisted ion beam etching", J VAC SCI B, 19(4), 2001, pp. 1334-1338

Abstract

This article presents an etching process to fabricate a high-quality vertical facet for the photonic quantum ring (PQR) laser. The presented process uses the chemically assisted ion beam etching (CAIBE) method with a gas mixture of Ar:Cl-2:BCl3=5:2:3 sccm, and uses a single-layer photoresist etch mask to reduce the process complexity of etching GaAs/AlGaAs structures for the PQR laser. The angle theta between the incident beam and the normal direction of the substrate has been adjusted to achieve a high-quality vertical facet. Distortions on the mask pattern are not transferred to the etched side wall for theta greater than or equal to 25 degrees, and a vertical facet is obtained at theta similar to 25 degrees. The fabricated PQR lasers with the CAIBE process in this article show a sharp linewidth of similar to 0.06 nm. (C) 2001 American Vacuum Society.

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Documento generato il 09/04/20 alle ore 00:18:40