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Titolo:
Atomic scale simulation of defect production in irradiated 3C-SiC
Autore:
Devanathan, R; Weber, WJ; Gao, F;
Indirizzi:
Battelle Mem Inst, Pacific NW Natl Lab, Richland, WA 99352 USA Battelle Mem Inst Richland WA USA 99352 Natl Lab, Richland, WA 99352 USA Indian Inst Technol, Dept Met Engn, Madras 600036, Chennai, India Indian Inst Technol Madras Chennai India 600036 as 600036, Chennai, India
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 5, volume: 90, anno: 2001,
pagine: 2303 - 2309
SICI:
0021-8979(20010901)90:5<2303:ASSODP>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
SIC SINGLE-CRYSTALS; 6H SILICON-CARBIDE; DISPLACEMENT CASCADES; MOLECULAR-DYNAMICS; COMPUTER-SIMULATION; INTERATOMIC POTENTIALS; INDUCED AMORPHIZATION; AMORPHOUS TRANSITION; METALS; ENERGY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
46
Recensione:
Indirizzi per estratti:
Indirizzo: Weber, WJ Battelle Mem Inst, Pacific NW Natl Lab, MS K8-93,POB 999, Richland, WA 99352 USA Battelle Mem Inst MS K8-93,POB 999 Richland WA USA 99352 352 USA
Citazione:
R. Devanathan et al., "Atomic scale simulation of defect production in irradiated 3C-SiC", J APPL PHYS, 90(5), 2001, pp. 2303-2309

Abstract

Molecular dynamics simulations using a modified Tersoff potential have been used to study the primary damage state and statistics of defect production in displacement cascades in 3C-SiC. Recoils with energies from 0.25 to 50keV have been simulated at 300 K. The results indicate that: (1) the displacement threshold energy surface is highly anisotropic; (2) the dominant surviving defects are C interstitials and vacancies; (3) the defect production efficiency decreases with increasing recoil energy; (4) defect clusters are much smaller and more sparse compared to those reported in metals; and (5) a small fraction of the surviving defects are antisite defects. (C) 2001American Institute of Physics.

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Documento generato il 30/03/20 alle ore 00:44:01