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Titolo:
A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL
Autore:
Washio, K; Kondo, M; Ohue, E; Oda, K; Hayami, R; Tanabe, M; Shimamoto, H; Harada, T;
Indirizzi:
Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan Hitachi Ltd Kokubunji Tokyo Japan 1858601 Kokubunji, Tokyo 1858601, Japan Hitachi Device Engn Co Ltd, Musashino Off, Kokubunji, Tokyo 1858601, JapanHitachi Device Engn Co Ltd Kokubunji Tokyo Japan 1858601 o 1858601, Japan Hitachi Ltd, Device Dev Ctr, Kokubunji, Tokyo 1858601, Japan Hitachi Ltd Kokubunji Tokyo Japan 1858601 Kokubunji, Tokyo 1858601, Japan
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 9, volume: 48, anno: 2001,
pagine: 1989 - 1994
SICI:
0018-9383(200109)48:9<1989:A0MSSS>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
BIPOLAR;
Keywords:
bipolar transistors; emitter coupled logic; epitaxial growth; heterojunctions;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Washio, K Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan Hitachi Ltd Kokubunji Tokyo Japan 1858601 Tokyo 1858601, Japan
Citazione:
K. Washio et al., "A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL", IEEE DEVICE, 48(9), 2001, pp. 1989-1994

Abstract

A 0.2-mum self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-mum-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including NEM capacitors and high-Q inductors, were formed by chemical mechanical polishing.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/04/20 alle ore 10:59:24