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Titolo:
Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs
Autore:
Miura, N; Abe, Y; Sugihara, K; Oishi, T; Furukawa, T; Nakahata, T; Shiozawa, K; Maruno, S;
Indirizzi:
Mitsubishi Electr Corp, Adv Technol R&D Ctr, Itami, Hyogo 6648641, Japan Mitsubishi Electr Corp Itami Hyogo Japan 6648641 mi, Hyogo 6648641, Japan
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 9, volume: 48, anno: 2001,
pagine: 1969 - 1974
SICI:
0018-9383(200109)48:9<1969:JCRDTS>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOSFETS; REGIONS;
Keywords:
elevated source/drain; junction capacitance; junction leakage; MOSFETs; selective epitaxy; short channel effect;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Miura, N Mitsubishi Electr Corp, Adv Technol R&D Ctr, Itami, Hyogo 6648641, Japan Mitsubishi Electr Corp Itami Hyogo Japan 6648641 6648641, Japan
Citazione:
N. Miura et al., "Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs", IEEE DEVICE, 48(9), 2001, pp. 1969-1974

Abstract

A new advantage of an elevated source/drain (S/D) configuration to improveMOSFET characteristics is presented. By adopting pocket implantation into an elevated S/D structure which was formed by Si selective epitaxial growthand gate sidewall removal, we demonstrate that the parasitic junction capacitance as well as the junction leakage was significantly reduced for an NMOSFET while maintaining its good short channel characteristics. These successful results are attributed to the modification of the boron impurity profile in the deep S/D regions. The capacitance reduction rate, furthermore, was more remarkable as the pocket dose was further increased. This means that the present self-aligned pocket implantation is very promising for futureMOSFETs with a very short gate length, where high pocket dosage will be required to suppress the short channel effect.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/03/20 alle ore 03:19:25