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Titolo:
Void formation by thermal stress concentration at twin interfaces in Cu thin films
Autore:
Sekiguchi, A; Koike, J; Kamiya, S; Saka, M; Maruyama, K;
Indirizzi:
Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan Tohoku Univ Sendai Miyagi Japan 9808579 ci, Sendai, Miyagi 9808579, Japan Tohoku Univ, Dept Mech Engn, Sendai, Miyagi 9808579, Japan Tohoku Univ Sendai Miyagi Japan 9808579 gn, Sendai, Miyagi 9808579, Japan
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 9, volume: 79, anno: 2001,
pagine: 1264 - 1266
SICI:
0003-6951(20010827)79:9<1264:VFBTSC>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
PASSIVATED COPPER INTERCONNECTS; LINES; BOUNDARIES; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Koike, J Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan Tohoku Univ Sendai Miyagi Japan 9808579 i, Miyagi 9808579, Japan
Citazione:
A. Sekiguchi et al., "Void formation by thermal stress concentration at twin interfaces in Cu thin films", APPL PHYS L, 79(9), 2001, pp. 1264-1266

Abstract

A void formation mechanism was investigated in an electroplated copper thin film on Ta/SiO2/Si. Microstructural observation after thermal cycling indicated that void formation occurred at intersecting points or terminating corners of annealing twins. The calculated stress distribution was compared with experimental results of the void formation tendency. An excellent correlation was found between void formation sites and stress concentration sites. Electron diffraction analysis revealed that most twin interfaces in Cu thin films are incoherent {322} planes. The stress concentration drives diffusion along incoherent twin interfaces of {322} and leads to void formation at twin interfaces and corners. (C) 2001 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 18:40:53