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Titolo:
ENHANCED DEPOSITION RATE OF SPUTTERED AMORPHOUS-SILICON WITH A HELIUMAND ARGON GAS-MIXTURE
Autore:
AIDA MS; ATTAF N; BENZEGOUTA A; HADJERIS L; SELMI M; ABDELWAHAB O;
Indirizzi:
UNIV CONSTANTINE,UNITE RECH PHYS MAT & APPLICAT,LAB PHYS COUCHES MINCES & INTERFACES CONSTANTINE 25000 ALGERIA
Titolo Testata:
Philosophical magazine letters
fascicolo: 2, volume: 76, anno: 1997,
pagine: 117 - 123
SICI:
0950-0839(1997)76:2<117:EDROSA>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI-H FILMS; HYDROGENATED SILICON; EXCITATION-FREQUENCY; PLASMA; SILANE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
17
Recensione:
Indirizzi per estratti:
Citazione:
M.S. Aida et al., "ENHANCED DEPOSITION RATE OF SPUTTERED AMORPHOUS-SILICON WITH A HELIUMAND ARGON GAS-MIXTURE", Philosophical magazine letters, 76(2), 1997, pp. 117-123

Abstract

Sputtered amorphous silicon thin films have been grown in an atmosphere of helium-argon gas and the effect of helium dilution investigated. The major observed feature is that helium dilution enhances the deposition rate. The highest deposition rate, six times larger than that obtained under conventional conditions, is reached with equal proportions of helium and argon in the deposition chamber. The influence of helium dilution is explained on the basis of an increase in the argon ionization rate with helium dilution.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/07/20 alle ore 17:40:00