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Titolo:
Ferroelectric SBT capacitor for 1-V operation
Autore:
Okuwada, K; Saito, M;
Indirizzi:
Toshiba Co Ltd, Proc & Mfg Engn Lab, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd Yokohama Kanagawa Japan 2358522 a, Kanagawa 2358522, Japan
Titolo Testata:
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
fascicolo: 8, volume: 84, anno: 2001,
pagine: 49 - 54
SICI:
8756-663X(2001)84:8<49:FSCF1O>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
FILM;
Keywords:
SrBi2Ta2O9; sol-gel process; nonvolatile memory; low-voltage operation; breakdown voltage;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Okuwada, K Toshiba Co Ltd, Proc & Mfg Engn Lab, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd Yokohama Kanagawa Japan 2358522 2358522, Japan
Citazione:
K. Okuwada e M. Saito, "Ferroelectric SBT capacitor for 1-V operation", ELEC C JP 2, 84(8), 2001, pp. 49-54

Abstract

For realization of low-voltage operation of ferroelectric nonvolatile memory, it is essential to fabricate thinner SBT film with high breakdown voltage. Repetition process for the sol-gel derived SBT film was modified to obtain thinner film with flat surface and high density. The breakdown voltage increased above 1 MV/cm. Good ferroelectric properties were obtained even in 1000-Angstrom -thick film and the switching charge saturated at 1.0 V without asymmetry in the polarization. (C) 2001 Scripta Technica, Electron Comm Jpn.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/01/20 alle ore 21:48:41