Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition
Autore:
Kamiya, T; Suemasu, A; Watanabe, T; Sameshima, T; Shimizu, I;
Indirizzi:
Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol Yokohama Kanagawa Japan 2268503 anagawa 2268503, Japan JST, CREST, Tokyo 1500002, Japan JST Tokyo Japan 1500002JST, CREST, Tokyo 1500002, Japan Tokyo Inst Technol, Grad Sch, Midori Ku, Yokohama, Kanagawa 2268502, JapanTokyo Inst Technol Yokohama Kanagawa Japan 2268502 anagawa 2268502, Japan Tokyo Univ Agr & Technol, Dept Elect & Elect Engn, Koganei, Tokyo 184, Japan Tokyo Univ Agr & Technol Koganei Tokyo Japan 184 oganei, Tokyo 184, Japan
Titolo Testata:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
fascicolo: 2, volume: 73, anno: 2001,
pagine: 151 - 159
SICI:
0947-8396(200108)73:2<151:IOTPFP>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILM TRANSISTORS; PRESSURE H2O VAPOR; LOW-TEMPERATURE; GROWTH; GAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Kamiya, T Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Madingley Rd,CambridgeCB3 0HE, England Univ Cambridge Madingley Rd Cambridge England CB3 0HE , England
Citazione:
T. Kamiya et al., "Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition", APPL PHYS A, 73(2), 2001, pp. 151-159

Abstract

The carrier transport property of polycrystalline silicon (poly-Si:H:F) thin films was studied in relation to film microstructure, impurity, in situ or post-annealing treatments to obtain better carrier transport properties. Poly-Si:H:F films were prepared from SiF4 and H-2 gas mixtures at temperatures < 300 degreesC. Dark conductivity of the films prepared at high SiF4/H-2 gas flow ratio (eg., 60/3 sccm) exhibits a high value for intrinsic silicon and its Fermi level is located near the conduction band edge. The carrier incorporation is suppressed well, either by in situ hydrogen plasma treatment or by post-annealing with high-pressure hot-H2O vapor. It is confirmed that weak-bonded hydrogen atoms are removed by the hot-H2O vapor annealing. In addition, evident correlation between impurity concentrations and dark conductivity is not found for these films. It is thought that the carrierincorporation in the films prepared at high SiF4/H2 alas flow ratios is related to grain-boundary defects such as weak-bonded hydrogen. By applying hot-H2O vapor annealing at 310 degreesC to a 1-mum-thick p-doped (400)-oriented poly-Si:H:F film, Hall mobility was improved from 10cm(2)/VS to 17 cm(2)/Vs.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 22:02:08