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Titolo:
Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs - art. no. 045317
Autore:
Panev, N; Pistol, ME; Zwiller, V; Samuelson, L; Jiang, W; Xu, B; Wang, Z;
Indirizzi:
Univ Lund, S-22100 Lund, Sweden Univ Lund Lund Sweden S-22100Univ Lund, S-22100 Lund, Sweden Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 4, volume: 6404, anno: 2001,
pagine: 5317 -
SICI:
0163-1829(20010715)6404:4<5317:RTNITP>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
SPECTROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Panev, N Univ Lund, Box 118, S-22100 Lund, Sweden Univ Lund Box 118 Lund Sweden S-22100 118, S-22100 Lund, Sweden
Citazione:
N. Panev et al., "Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs - art. no. 045317", PHYS REV B, 6404(4), 2001, pp. 5317

Abstract

We have investigated random telegraph noise in the photoluminescence from InGaAs quantum dots in GaAs. Dots switching among two and three levels havebeen measured. The experiments show that the switching InGaAs dots behave very similarly to switching InP dots in GaInP. but differently from the more commonly investigated colloidal dots. The switching is attributed to defects, and we show that the switching can be used as a monitor of the defect.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/01/20 alle ore 19:35:32