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Titolo:
Analysis of the modulated photocurrent experiment - art. no. 045204
Autore:
Kounavis, P;
Indirizzi:
Univ Patras, Sch Engn, Dept Engn Sci, Patra 26500, Greece Univ Patras Patra Greece 26500 Engn, Dept Engn Sci, Patra 26500, Greece
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 4, volume: 6404, anno: 2001,
pagine: 5204 -
SICI:
0163-1829(20010715)6404:4<5204:AOTMPE>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-SHIFT ANALYSIS; A-SI-H; FREQUENCY-RESOLVED SPECTROSCOPY; HYDROGENATED AMORPHOUS-SILICON; GAP-STATE DISTRIBUTION; TRANSIENT PHOTOCONDUCTIVITY; DISPERSIVE TRANSPORT; SEMICONDUCTORS; RECOMBINATION; DEFECTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
36
Recensione:
Indirizzi per estratti:
Indirizzo: Kounavis, P Univ Patras, Sch Engn, Dept Engn Sci, Patra 26500, Greece UnivPatras Patra Greece 26500 Engn Sci, Patra 26500, Greece
Citazione:
P. Kounavis, "Analysis of the modulated photocurrent experiment - art. no. 045204", PHYS REV B, 6404(4), 2001, pp. 5204

Abstract

The analysis of the modulated photocurrent (MPC) experiment is based on the fact that empty gap states at a given energy, well above the respective quasi-Fermi level, are related to the phase shift and amplitude of the MPC of a specific frequency. This is used to extract the density-of-states (DOS)distribution of disordered semiconductors. However, only a limited region at higher frequencies of the experimental spectra corresponds usually to empty gap states. Moreover, the physics involved in the rest of the data is not quite clarified and thus cannot be used to extract any useful information about the DOS. In order to overcome this difficulty, simple theoretical relations of the real and imaginary terms of the MPC with specific gap states of any frequency are derived for the first time. The general expressions of the probing energy levels are presented suggesting that different gap states can be probed by changing not only the modulation frequency but alternatively the bias-light level also. The derived theoretical relations allow the determination of the energy profile of the trapping gap states that areat the quasi-Fermi level and above it, their capture coefficient. and the absolute magnitude of the recombination centers using all the experimental data. Also, by employing computer simulations, it is shown that contributions from different gap state distributions can be resolved directly from theexperimental spectra without prior assumptions about the DOS.

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Documento generato il 30/11/20 alle ore 16:53:20