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Titolo:
Low temperature deposition and characterization of polycrystalline Si films on polymer substrates
Autore:
Xu, K; Shah, SI; Guerin, D;
Indirizzi:
Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 pt Mat Sci & Engn, Newark, DE 19716 USA Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 pt Mat Sci & Engn, Newark, DE 19716 USA Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 ept Phys & Astron, Newark, DE 19716 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 4, volume: 19, anno: 2001,
parte:, 1
pagine: 1078 - 1082
SICI:
0734-2101(200107/08)19:4<1078:LTDACO>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; SILICON THIN-FILMS; MICROCRYSTALLINE SILICON; AMORPHOUS-SILICON; ION-BOMBARDMENT; GRAIN-GROWTH; TRANSISTORS; IRRADIATION; DIFFUSION; ALLOYS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
38
Recensione:
Indirizzi per estratti:
Indirizzo: Shah, SI Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 i & Engn, Newark, DE 19716 USA
Citazione:
K. Xu et al., "Low temperature deposition and characterization of polycrystalline Si films on polymer substrates", J VAC SCI A, 19(4), 2001, pp. 1078-1082

Abstract

Polycrystalline Si films were deposited on poly(ethyleneterephthalate) (PET-Mylar((R))) and glass (7059 Corning) substrates at 140 and 200 degreesC. respectively. X-ray diffraction and Raman spectroscopy were used to confirmthe polycrystalline nature of the films. The largest grain size obtained was 95 nm. Raman spectroscopy also showed a simultaneous presence of an amorphous phase. The relative fraction of this amorphous phase was controllableby adjusting the composition of the sputtering gas. Films deposited with only Ar or Ar+H-2 sputtering gas show a very small polycrystalline Si peak. With the addition of up to 10% Kr to the gas mixture, a very strong polycrystalline peak appears in the Raman spectra. X-ray diffraction also confirmed the polycrystalline nature of the films. The Kr effect was related to theenergetic condensation. The presence of Kr increased the energy of the sputtered atoms. Even after collision with the sputtering gas, these atoms impinge on the substrate surface with enough residual energy that the ad-atomsexperience enhanced diffusion, which leads to polycrystalline film formation. For our system, the final energy of the ad-atoms was calculated to be 1.92 eV, which is more than the activation energy for surface self-diffusionfor Si. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/08/20 alle ore 21:01:15