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Titolo:
Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces
Autore:
Zhang, X; Chabal, YJ; Christman, SB; Chaban, EE; Garfunkel, E;
Indirizzi:
Agere Syst, Murray Hill, NJ 07974 USA Agere Syst Murray Hill NJ USA 07974Agere Syst, Murray Hill, NJ 07974 USA Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA Rutgers State Univ Piscataway NJ USA 08854 Chem, Piscataway, NJ 08854 USA Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA Bell Labs Murray Hill NJ USA 07974 ent Technol, Murray Hill, NJ 07974 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 4, volume: 19, anno: 2001,
parte:, 2
pagine: 1725 - 1729
SICI:
0734-2101(200107/08)19:4<1725:OOHFAV>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
ULTRATHIN GATE OXIDES; HYDROGEN TERMINATION; DYNAMIC OBSERVATIONS; SILICON OXIDATION; THERMAL-OXIDATION; STEPS; GROWTH; TA2O5;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Zhang, X Agere Syst, Murray Hill, NJ 07974 USA Agere Syst Murray Hill NJ USA 07974 t, Murray Hill, NJ 07974 USA
Citazione:
X. Zhang et al., "Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces", J VAC SCI A, 19(4), 2001, pp. 1725-1729

Abstract

The initial stages Of O-2 oxidation of H-passivated flat and vicinal Si(1 1 1) surfaces are investigated by monitoring the Si-H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66 +/-0.10 CV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si-Si bonds without removing surface hydrogen and this process is facilitated at steps. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/07/20 alle ore 07:02:16