Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
(0001) oriented GaN epilayer grown on (1 1 (2)over-bar 0) sapphire by MOCVD
Autore:
Bai, J; Wang, T; Li, HD; Jiang, N; Sakai, S;
Indirizzi:
Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan Univ Tokushima Tokushima Japan 7708506 ct Engn, Tokushima 7708506, Japan Univ Tokushima, Satellite Venture Business Lab, Tokushima 7708506, Japan Univ Tokushima Tokushima Japan 7708506 ess Lab, Tokushima 7708506, Japan Nitride Semicond, Tokushima, Japan Nitride Semicond Tokushima JapanNitride Semicond, Tokushima, Japan
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 231, anno: 2001,
pagine: 41 - 47
SICI:
0022-0248(200109)231:1-2<41:(OGEGO>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
ECR-ASSISTED MBE; QUANTUM-WELLS; EPITAXIAL-GROWTH; TEMPERATURE; SPECTROSCOPY; FILMS; LAYER;
Keywords:
X-ray diffraction; nitrides; sapphire; semiconducting gallium compounds;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Bai, J Univ Tokushima, Dept Elect & Elect Engn, 2-1 Minamijosanjima, Tokushima 7708506, Japan Univ Tokushima 2-1 Minamijosanjima Tokushima Japan 7708506 , Japan
Citazione:
J. Bai et al., "(0001) oriented GaN epilayer grown on (1 1 (2)over-bar 0) sapphire by MOCVD", J CRYST GR, 231(1-2), 2001, pp. 41-47

Abstract

Since the major advantage of (1 1 (2) over bar 0) sapphire substrate is the ability to easily form cleaved facets, which is important for the fabrication of edge-emitting lasers, it is meaningful to investigate the GaN epilayer grown on (1 1 (2) over bar0) sapphire substrate. X-ray diffraction (XRD) measurement indicates that the GaN growth is still along (0 0 0 1) direction even on (1 1 0) sapphire substrate. However, compared with the GaN grown on (0 0 0 1) sapphire substrate, the GaN layer on (1 1 0) sapphire substrate shows a larger c-axis lattice constant and smaller a-axis lattice constant, which indicates that there exists an enhanced lattice-mismatch compared with the case on (0 0 0 1) sapphire substrate. The detailed XRD measurement indicates that the strain exerted on the GaN on (1 1 0) sapphire substrate is increased by 0.03% compared with that on (0 0 0 1) sapphire substrate. Furthermore, the low-temperature photoluminescence indicates that the GaNon ( 1 1 0) sapphire substrate shows a 4.5 meV blue-shift compared with the GaN on (0 0 0 1) sapphire substrate, which is in a good agreement with our calculation based on the lattice-mismatch induced strain model. A crystallographic depict is proposed for a good explanation of a GaN layer growth on (1 1 (2) over bar 0) sapphire substrate. By selective-area diffraction (SAD) and high-resolution transmission electron microscopy measurement (HREM), the inplane orientation relationship is determined to be (1 1 (2) over bar 0)(GaN) //(1 (1) over bar 0 0)(sapphire) and (1 (1) over bar0 0)(GaN) // (0 0 0 1)(sapphire) which also shows that a larger lattice-mismatch between(0 0 0 1) GaN and (I I 0) sapphire substrate occurs and thus gives rise toan enhanced compressive strain. In turn, it supports our above discussion. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/03/20 alle ore 10:26:01