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Titolo:
Fabrication of microcrystalline silicon TFTs using a high-density plasma approach
Autore:
Krishnan, AT; Bae, SH; Fonash, SJ;
Indirizzi:
Texas Instruments Inc, Dallas, TX 77243 USA Texas Instruments Inc Dallas TX USA 77243 ments Inc, Dallas, TX 77243 USA Penn State Univ, PSU Nanofabricat Facil, University Pk, PA 16802 USA Penn State Univ University Pk PA USA 16802 l, University Pk, PA 16802 USA
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 8, volume: 22, anno: 2001,
pagine: 399 - 401
SICI:
0741-3106(200108)22:8<399:FOMSTU>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; THIN-FILM TRANSISTORS; GLASS;
Keywords:
ECR; high-density plasmas; linear field effect mobility; microcrystalline silicon thin film transistors;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Bae, SH Texas Instruments Inc, Dallas, TX 77243 USA Texas Instruments IncDallas TX USA 77243 c, Dallas, TX 77243 USA
Citazione:
A.T. Krishnan et al., "Fabrication of microcrystalline silicon TFTs using a high-density plasma approach", IEEE ELEC D, 22(8), 2001, pp. 399-401

Abstract

N-channel microcrystalline silicon (mc-Si) thin him transistors (TFTs) were fabricated using a high density plasma (HDP) approach. An electron cyclotron resonance (ECR) plasma source was employed to deposit all of thin film materials needed for the transistor; that is, intrinsic me-Si, n-type me-Si, and dielectric silicon dioxide were grown with the ECR high density plasmas and the deposition rates for these films were in the range of 120-150 Angstrom /min. The substrate temperatures during these depositions were maintained below 285 degreesC, To complete the fabrication of these TFTs, we used only two masks with one alignment, After 1 h annealing under forming gas atmosphere, the me-Si TFTs perform with linear field effect mobility of 12 cm(2)/V-s, on/off ratio of 10(6), subthreshold swing of 0.3 V/decade, off-current of 4 x 10(-13) A/mum and threshold voltage of 5 V,

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Documento generato il 20/10/20 alle ore 02:59:07