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Titolo:
Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping
Autore:
Kim, CH; Jung, SH; Yoo, JS; Han, MK;
Indirizzi:
Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 Engn, Seoul 151742, South Korea
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 8, volume: 22, anno: 2001,
pagine: 396 - 398
SICI:
0741-3106(200108)22:8<396:PTFBLI>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILM TRANSISTORS;
Keywords:
excimer laser annealing; fluorine; passivation; poly-Si TFTs; reliability;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, CH Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 oul 151742, South Korea
Citazione:
C.H. Kim et al., "Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping", IEEE ELEC D, 22(8), 2001, pp. 396-398

Abstract

A new poly-Si TFT has been fabricated by employing laser-induced in-situ fluorine passivation and laser-doping method. With only one excimer laser annealing, we have successfully fabricated the device using one step to crystallize, passivate and dope simultaneously. Although any additional plasma post-passivation was not performed, the on-state and the off-state leakage properties of TFTs with fluorine passivation were improved compared with those without fluorine passivation. The device with in-situ fluorine passivation has the maximum transconductance of 13.3 muA/V for a C2F6 flow rate of 100 seem, while the device without fluorine passivation has that of 8.4 muA/V, The device reliability under electrical stress was remarkably improved in the in-situ fluorine-passivated devices due to the fluorine passivation effects of trap states in the poly-Si channel and SiO2/poly-Si interface.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/11/20 alle ore 11:52:18