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Titolo:
Implantation-produced structural damage in InxGa1-xN
Autore:
Kucheyev, SO; Williams, JS; Zou, J; Pearton, SJ; Nakagawa, Y;
Indirizzi:
Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia Australian Natl Univ Canberra ACT Australia 0200 rra, ACT 0200, Australia Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia Univ Sydney Sydney NSW Australia 2006 roanal, Sydney, NSW 2006, Australia Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA Univ FloridaGainesville FL USA 32611 i & Engn, Gainesville, FL 32611 USA Nichia Chem Ind, Tokushima 774, Japan Nichia Chem Ind Tokushima Japan 774 ichia Chem Ind, Tokushima 774, Japan
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 5, volume: 79, anno: 2001,
pagine: 602 - 604
SICI:
0003-6951(20010730)79:5<602:ISDII>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION-IMPLANTATION; SEMICONDUCTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Kucheyev, SO Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect MatEngn, Canberra, ACT 0200, Australia Australian Natl Univ Canberra ACT Australia 0200 , Australia
Citazione:
S.O. Kucheyev et al., "Implantation-produced structural damage in InxGa1-xN", APPL PHYS L, 79(5), 2001, pp. 602-604

Abstract

The influence of In content on the accumulation of structural damage in InxGa1-xN films (with x=0.0-0.2) under heavy-ion bombardment is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results show that an increase in In concentration strongly suppresses dynamic annealing processes and, hence, enhances thebuildup of stable lattice disorder in InGaN under ion bombardment, A comparison of the damage buildup behavior and defect microstructure in InGaN with those in GaN is presented. Results of this study may have significant technological implications for estimation and control of implantation-produceddamage in InGaN/GaN heterostructures. (C) 2001 American Institute of Physics.

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Documento generato il 29/03/20 alle ore 08:25:53