Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
High rate deposition of TiO2 and SiO2 films by radical beam assisted deposition (RBAD)
Autore:
Harada, T; Yamada, Y; Uyama, H; Murata, T; Nozoye, H;
Indirizzi:
Toppan Printing Co Ltd, Tech Res Inst, Kita Katsushika, Saitama 3458508, Japan Toppan Printing Co Ltd Kita Katsushika Saitama Japan 3458508 58508, Japan Shincron Co Ltd, Div Res & Dev, Tokyo 1408540, Japan Shincron Co Ltd Tokyo Japan 1408540 Div Res & Dev, Tokyo 1408540, Japan Natl Inst Mat & Chem Res, Dept Mol Engn, Tsukuba, Ibaraki 3058566, Japan Natl Inst Mat & Chem Res Tsukuba Ibaraki Japan 3058566 aki 3058566, Japan
Titolo Testata:
THIN SOLID FILMS
fascicolo: 2, volume: 392, anno: 2001,
pagine: 191 - 195
SICI:
0040-6090(20010730)392:2<191:HRDOTA>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; TEMPERATURE; GROWTH;
Keywords:
optical coatings; physical vapor deposition; silicon oxide; titanium oxide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Harada, T Toppan Printing Co Ltd, Tech Res Inst, 4-2-3 Takanondai Minami, Kita Katsushika, Saitama 3458508, Japan Toppan Printing Co Ltd 4-2-3 Takanondai Minami Kita Katsushika Saitama Japan 3458508
Citazione:
T. Harada et al., "High rate deposition of TiO2 and SiO2 films by radical beam assisted deposition (RBAD)", THIN SOL FI, 392(2), 2001, pp. 191-195

Abstract

Radical beam assisted deposition (RBAD) is an advanced and attractive technique compared with the conventional vacuum evaporation process. In this study, TiO2 and SiO2 films were deposited from Ti and Si metals onto glass substrate by READ. Atomic oxygen radicals were produced by a beam source using a RF plasma tube. The atomic oxygen radical beam flux (AORBF) density could be achieved to be more than 1 x 10(15) (atom cm(-2) s(-1)). The refractive indices n of the TiO2 films were higher than 2.35, and the extinction coefficients k were lower than 3 x 10(-3) at the deposition rate of 1.8 nm s(-1) when the AORBF density was 8.4 X 10(15) (atom cm(-2) s(-1)). For the SiO2 film, n was 1.48, and k was lower than 1.5 x 10(-3) at the deposition rate of 2.4 nm s(-1). Moreover, n of the TiO2 films could be increased to 2.50 by adding an ion beam flux to the radical beam flux. From these results, it is confirmed that TiO2 and SiO2 films deposited by READ have good optical properties even at higher deposition rates. (C) 2001 Elsevier Science B.V, All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/04/20 alle ore 21:53:31