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Titolo:
Die stress drift measurement in IC plastic packages using the piezo-Hall effect
Autore:
Manic, D; Petr, J; Popovic, RS;
Indirizzi:
EPFL, Swiss Fed Inst Technol, Inst Microsyst, CH-1015 Lausanne, Switzerland EPFL Lausanne Switzerland CH-1015 crosyst, CH-1015 Lausanne, Switzerland Siemens AG, CH-6301 Zug, Switzerland Siemens AG Zug Switzerland CH-6301Siemens AG, CH-6301 Zug, Switzerland
Titolo Testata:
MICROELECTRONICS RELIABILITY
fascicolo: 5, volume: 41, anno: 2001,
pagine: 767 - 771
SICI:
0026-2714(200105)41:5<767:DSDMII>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
COEFFICIENTS; SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Manic, D Xemics SA, Maladiere 71, CH-2007 Neuchatel, Switzerland Xemics SAMaladiere 71 Neuchatel Switzerland CH-2007 Switzerland
Citazione:
D. Manic et al., "Die stress drift measurement in IC plastic packages using the piezo-Hall effect", MICROEL REL, 41(5), 2001, pp. 767-771

Abstract

A method for encapsulation stress drift measurement based on the piezo-Hall effect is proposed. Accuracy of +/-0.25 MPa for the sum of in-plane normal stresses is achieved. Using this method, the drift of die stress in IC plastic packages has been measured after temperature cycling. Stress relaxation with the time constant of about one day has been observed. (C) 2001 Elsevier Science Ltd. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/11/20 alle ore 09:50:10