Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
InAs/InGaSb photodetectors grown on GaAs bonded substrates
Autore:
Vilela, MF; Anselm, KA; Sooriar, N; Johnson, JL; Lin, CH; Brown, GJ; Mahalingam, K; Saxler, A; Szmulowicz, F;
Indirizzi:
Appl Optoelect Inc, Sugar Land, TX 77478 USA Appl Optoelect Inc Sugar Land TX USA 77478 Inc, Sugar Land, TX 77478 USA USAF, Res Lab, AFRL, MLPO,Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA USAF Wright Patterson AFB OH USA 45433 Wright Patterson AFB, OH 45433 USA
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 7, volume: 30, anno: 2001,
pagine: 798 - 801
SICI:
0361-5235(200107)30:7<798:IPGOGB>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
INAS/GA1-XINXSB SUPERLATTICE; INFRARED PHOTODIODES; STRUCTURAL QUALITY; GASB; MBE;
Keywords:
infrared photodetector; strained layer superlattice; InAs/InGaSb; wafer fusion; MBE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Vilela, MF Appl Optoelect Inc, 13111 Jess Pirtle, Sugar Land, TX 77478 USAAppl Optoelect Inc 13111 Jess Pirtle Sugar Land TX USA 77478 SA
Citazione:
M.F. Vilela et al., "InAs/InGaSb photodetectors grown on GaAs bonded substrates", J ELEC MAT, 30(7), 2001, pp. 798-801

Abstract

The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of him transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two differentsubstrates with nearly identical superlattice periods showed a shift in the cutoff wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 06:08:41