Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Exchange enhancement and thermal anneal in Mn76Ir24 bottom-pinned spin valves
Autore:
Li, HH; Freitas, PP; Wang, ZJ; Sousa, JB; Gogol, P; Chapman, J;
Indirizzi:
INESC, P-1000 Lisbon, Portugal INESC Lisbon Portugal P-1000INESC, P-1000 Lisbon, Portugal Inst Super Tecn, Dept Phys, P-1096 Lisbon, Portugal Inst Super Tecn Lisbon Portugal P-1096 ept Phys, P-1096 Lisbon, Portugal IFIMUP, P-4000 Oporto, Portugal IFIMUP Oporto Portugal P-4000IFIMUP, P-4000 Oporto, Portugal Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland Univ Glasgow Glasgow Lanark Scotland G12 8QQ ow G12 8QQ, Lanark, Scotland
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 11, volume: 89, anno: 2001,
parte:, 2
pagine: 6904 - 6906
SICI:
0021-8979(20010601)89:11<6904:EEATAI>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
MN-IR; FILMS; LAYERS; TEMPERATURE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Li, HH INESC, R Alves Redol 9-1, P-1000 Lisbon, Portugal INESC R Alves Redol 9-1 Lisbon Portugal P-1000 00 Lisbon, Portugal
Citazione:
H.H. Li et al., "Exchange enhancement and thermal anneal in Mn76Ir24 bottom-pinned spin valves", J APPL PHYS, 89(11), 2001, pp. 6904-6906

Abstract

Exchange enhancement through thermal anneal in bottom-pinned Mn76Ir24 spinvalves is investigated. Samples were fabricated by ion beam deposition (IBD), post-annealed in vacuum (10(-6) Torr) at 270 degreesC for 10 min, then cooled in a 3 kOe applied field. For a bilayer structure, glass/Ta 40 Angstrom /NiFe 30 Angstrom /MnIr 60 Angstrom /CoFe 25 Angstrom /Ta 40 Angstrom, the exchange field (H-ex) reaches 1148 Oe (J(ex) = 0.4 erg/cm(2)) after anneal. X-ray diffraction (XRD) analysis shows strong enhancement of [111] texture upon anneal, while grain size obtained from XRD and transmission electron microscopy for as-deposited and annealed states shows no major change. With increasing MnIr thickness, the exchange field decreases, and blocking temperature (T-b) increases, reaching 295 degreesC for t(MnIr) = 180 Angstrom. Spin valves built with the same exchange bilayer (Ta 20 Angstrom /NiFe 30 Angstrom /MnIr 60 Angstrom /CoFe 25 Angstrom /Cu 22 Angstrom /CoFe 20 Angstrom /NiFe 40 Angstrom /Ta 40 Angstrom) show H-ex = 855 Oe (J(ex) = 0.3 erg/cm(2)) and magnetoresistance (MR) = 7.1%. The incorporation of nano-oxide layers in spin valves increases the MR signal to 11%. No signal degradation is found in these specular structures for anneals up to 310 degreesC. (C) 2001 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 11/07/20 alle ore 06:45:42