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Titolo:
Improving performance of resonant tunneling devices in asymmetric structures
Autore:
Shi, JJ; Sanders, BC; Pan, SH; Goldys, EM;
Indirizzi:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol Kowloon Hong Kong Peoples R China s R China China Ctr Adv Sci & Technol, World Lab, Beijing 100080, Peoples R China China Ctr Adv Sci & Technol Beijing Peoples R China 100080 oples R China Macquarie Univ, Dept Phys, Sydney, NSW 2109, Australia Macquarie Univ Sydney NSW Australia 2109 hys, Sydney, NSW 2109, Australia Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China Chinese Acad Sci Beijing Peoples R China 100080 100080, Peoples R China
Titolo Testata:
PHYSICA E
fascicolo: 4, volume: 10, anno: 2001,
pagine: 535 - 543
SICI:
1386-9477(200106)10:4<535:IPORTD>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
DOUBLE-BARRIER STRUCTURES; MULTIPLE-VALUED LOGIC; PHONON-EMISSION; MAGNETIC-FIELD; DIODES; SCATTERING; HETEROSTRUCTURES; COMPLEXITY; MODES;
Keywords:
resonant tunneling; self-consistent calculation; electron-phonon scattering; phonon-assisted tunneling;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
34
Recensione:
Indirizzi per estratti:
Indirizzo: Shi, JJ Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol Kowloon Hong Kong Peoples R Chinaa
Citazione:
J.J. Shi et al., "Improving performance of resonant tunneling devices in asymmetric structures", PHYSICA E, 10(4), 2001, pp. 535-543

Abstract

Based on the global coherent tunneling model, we present a self-consistentcalculation and show that structural asymmetry of double barrier resonant tunneling structures (DBRTSs) significantly modifies the current-voltage characteristics compared to the symmetric structures. Within the framework ofthe dielectric continuum model, we further investigate the phonon-assistedtunneling (PAT) current in symmetric and asymmetric DBRTSs. Both the interface modes and the confined bulk-like longitudinal-optical phonons are considered. The results indicate that the four higher-frequency interface phonon modes (especially the one which has the largest electron-phonon interaction at either interface of the emitter barrier) dominate the PAT processes. We show that a suitably designed asymmetric structure can produce much larger peak current and absolute value of the negative differential conductivity than its commonly used symmetric counterpart. (C) 2001 Elsevier Science B. V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/01/20 alle ore 16:08:13