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Titolo:
In situ x-ray topography measurements of the growth temperature dependenceof the critical thickness of epitaxial InGaAs on GaAs
Autore:
Tanner, BK; Parbrook, PJ; Whitehouse, CR; Keir, AM; Johnson, AD; Jones, J; Wallis, D; Smith, LM; Lunn, B; Hogg, JHC;
Indirizzi:
Univ Durham, Dept Phys, Durham DH1 3LE, England Univ Durham Durham England DH1 3LE m, Dept Phys, Durham DH1 3LE, England Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 4DU, S Yorkshire, England Univ Sheffield Sheffield S Yorkshire England S1 4DU S Yorkshire, England DERA, Malvern WR14 3PS, Worcs, England DERA Malvern Worcs England WR14 3PS ERA, Malvern WR14 3PS, Worcs, England Univ Hull, Sch Engn, Hull HU6 7RX, N Humberside, England Univ Hull Hull NHumberside England HU6 7RX U6 7RX, N Humberside, England Univ Hull, Dept Phys, Hull HU6 7RX, N Humberside, England Univ Hull Hull N Humberside England HU6 7RX U6 7RX, N Humberside, England
Titolo Testata:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
fascicolo: 10A, volume: 34, anno: 2001,
pagine: A109 - A113
SICI:
0022-3727(20010521)34:10A<A109:ISXTMO>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
MISFIT DISLOCATIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Tanner, BK Univ Durham, Dept Phys, South Rd, Durham DH1 3LE, England Univ Durham South Rd Durham England DH1 3LE m DH1 3LE, England
Citazione:
B.K. Tanner et al., "In situ x-ray topography measurements of the growth temperature dependenceof the critical thickness of epitaxial InGaAs on GaAs", J PHYS D, 34(10A), 2001, pp. A109-A113

Abstract

In situ high-resolution double-axis x-ray topography measurements have been made of the critical thickness at which misfit dislocations form in strained layers of In(x)G(1-x)As grown epitaxially on (001) GaAs substrates. Thecritical thickness for formation of the initial fast B(g) misfit dislocations was found to be close to, but larger than the predictions of the Matthews-Blakeslee model. The discrepancy and the variation of the critical thickness with silicon doping have been modelled by inclusion of a Peierls stress in the force balance equation of misfit dislocation motion. Only a very small change was observed in the critical thickness as a function of growth temperature. Inclusion of a temperature-dependent term in the Matthews-Blakeslee model enabled an activation energy 0.3 +/- 0.2 eV to be determined.

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Documento generato il 02/04/20 alle ore 13:03:54