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Titolo:
Formation of uniform nanoscale Ge islands on Si(111)-7 x 7 substrate
Autore:
Masuda, K; Shigeta, Y;
Indirizzi:
Yokohama City Univ, Grad Sch Integrated Sci, Fac Sci, Kanazawa Ku, Yokohama, Kanagawa 2360027, Japan Yokohama City Univ Yokohama Kanagawa Japan 2360027 anagawa 2360027, Japan
Titolo Testata:
APPLIED SURFACE SCIENCE
, volume: 175, anno: 2001,
pagine: 77 - 82
SICI:
0169-4332(20010515)175:<77:FOUNGI>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWTH; SI; SURFACE; SUPERLATTICE; STM;
Keywords:
nucleation; scanning tunneling microscopy; surface relaxation and reconstruction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Shigeta, Y Yokohama City Univ, Grad Sch Integrated Sci, Fac Sci, Kanazawa Ku, Yokohama, Kanagawa 2360027, Japan Yokohama City Univ Yokohama KanagawaJapan 2360027 0027, Japan
Citazione:
K. Masuda e Y. Shigeta, "Formation of uniform nanoscale Ge islands on Si(111)-7 x 7 substrate", APPL SURF S, 175, 2001, pp. 77-82

Abstract

We have reported the formation of uniform nanoscale Si islands (3.8 nm in diameter) on a Si(1 1 1)-7 x 7 substrate by using the stable reconstructed structure on the substrate as a template. It is very interesting to use thetemplate as a method of quantum dot formation. We have tried to form the uniform nanoscale island of Ge on the Sill 1 1)-7 x 7 substrate at various growth conditions (substrate temperature and annealing temperature) and observed the size distribution of Cre islands with a scanning tunneling microscope (STM). The range of substrate and annealing temperatures were chosen between 300 and 400 degreesC. And we succeeded in the formation of uniform Geislands showing a rounded shape with a diameter of 3.8 nm, when the Ge is deposited at 320 degreesC and annealed at 360 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 04/12/20 alle ore 13:18:18