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Titolo:
Chemisorption energy of hydrogen on silicon surfaces - art. no. 201303
Autore:
Raschke, MB; Hofer, U;
Indirizzi:
Max Planck Inst Quantenopt, D-85740 Garching, Germany Max Planck Inst Quantenopt Garching Germany D-85740 40 Garching, Germany Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany Univ Marburg Marburg Germany D-35032 eich Phys, D-35032 Marburg, Germany Univ Marburg, Zentrum Mat Wissensch, D-35032 Marburg, Germany Univ Marburg Marburg Germany D-35032 Wissensch, D-35032 Marburg, Germany
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 20, volume: 6320, anno: 2001,
pagine: 1303 -
SICI:
0163-1829(20010515)6320:20<1303:CEOHOS>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
MONOHYDRIDE PHASE; SI(111)-(7X7) SURFACE; H-2 DESORPTION; ADSORPTION; SI(100); MECHANISM; KINETICS; STICKING; DYNAMICS; TEMPERATURE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
34
Recensione:
Indirizzi per estratti:
Indirizzo: Raschke, MB Max Planck Inst Quantenopt, D-85740 Garching, Germany Max Planck Inst Quantenopt Garching Germany D-85740 Germany
Citazione:
M.B. Raschke e U. Hofer, "Chemisorption energy of hydrogen on silicon surfaces - art. no. 201303", PHYS REV B, 6320(20), 2001, pp. 1303

Abstract

The chemisorption energy of H-2 on Si(111)7x7 and Si(001)2x1 was determined from thermodynamic equilibrium experiments in an ultrahigh vacuum quartz apparatus at temperatures of 760 to 970 K. The obtained values of 1.7 +/-0.2 eV for Si(111) and 1.9 +/-0.3 eV for Si(001) correspond to SI-H bond energies of 3.1 and 3.2 eV, respectively. Hydrogen bonding with silicon surfaces is thus found to be considerably weaker than in silane molecules and homologous clusters.

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Documento generato il 02/12/20 alle ore 18:38:31