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Titolo:
ESR study of GaAs : Er codoped with oxygen grown by organometallic vapor phase epitaxy
Autore:
Yoshikawa, J; Urakawa, C; Ohta, H; Koide, T; Kawamoto, T; Fujiwara, Y; Takeda, Y;
Indirizzi:
Kobe Univ, Fac Sci, Dept Phys, Kobe, Hyogo 6578501, Japan Kobe Univ Kobe Hyogo Japan 6578501 Dept Phys, Kobe, Hyogo 6578501, Japan Kobe Univ, Venture Business Lab, Kobe, Hyogo 6578501, Japan Kobe Univ Kobe Hyogo Japan 6578501 siness Lab, Kobe, Hyogo 6578501, Japan Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 sa Ku, Nagoya, Aichi4648603, Japan
Titolo Testata:
PHYSICA E
fascicolo: 1-3, volume: 10, anno: 2001,
pagine: 395 - 398
SICI:
1386-9477(200105)10:1-3<395:ESOG:E>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRON-SPIN-RESONANCE; DEPOSITION;
Keywords:
X-band ESR; GaAs : Er; oxygen codoping; photoluminescence;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Yoshikawa, J Kobe Univ, Fac Sci, Dept Phys, 1-1 Rokko Dai, Kobe, Hyogo 6578501, Japan Kobe Univ 1-1 Rokko Dai Kobe Hyogo Japan 6578501 78501, Japan
Citazione:
J. Yoshikawa et al., "ESR study of GaAs : Er codoped with oxygen grown by organometallic vapor phase epitaxy", PHYSICA E, 10(1-3), 2001, pp. 395-398

Abstract

X-band ESR measurements of GaAs:Er grown at 543 degreesC by organometallicvapor phase epitaxy (OMVPE) with and without an additional O-2 flow (samples I and II, respectively) have been performed at 3.5 K. Sample I shows an isotropic ESR signal around g = 6 together with several anisotropic ESR signals in the g-value region from 0.7 to 3, while sample II shows only an isotropic ESR signal around g = 6, suggesting the formation of Er-2O centers in sample I. We also observed the temperature dependence of the anisotropic signals in sample I from 3.5 to 15 K. The integrated intensity showed a maximum at 7 K suggesting that these ESR signals are coming from the excited states very close to the ground state. The ESR signal also turned out to be very sensitive to the growth temperature of GaAs:Er. GaAs:Er grown at 628 degreesC by OMVPE with an additional O-2 flow (sample III) showed no ESR signal at 3 K. These results will be discussed in connection with PL results of samples I-III. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 11/07/20 alle ore 14:10:36