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Titolo:
Large tunneling magnetoresistance (> 70%) in GaMnAs/AlAs/GaMnAs single-barrier ferromagnetic semiconductor tunnel junctions
Autore:
Higo, Y; Shimizu, H; Tanaka, M;
Indirizzi:
Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan Univ Tokyo Tokyo Japan 1138656 ect Engn, Bunkyo Ku, Tokyo 1138656, Japan
Titolo Testata:
PHYSICA E
fascicolo: 1-3, volume: 10, anno: 2001,
pagine: 292 - 294
SICI:
1386-9477(200105)10:1-3<292:LTM(7I>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Keywords:
tunneling magnetoresistance; GaMnAs; ferromagnet; semiconductor; magnetic tunnel junction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Tanaka, M Univ Tokyo, Dept Elect Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan Univ Tokyo 7-3-1 Hongo Tokyo Japan 1138656 Tokyo 1138656, Japan
Citazione:
Y. Higo et al., "Large tunneling magnetoresistance (> 70%) in GaMnAs/AlAs/GaMnAs single-barrier ferromagnetic semiconductor tunnel junctions", PHYSICA E, 10(1-3), 2001, pp. 292-294

Abstract

We have observed very large tunneling magneto-resistance (TMR) in GaMnAs/AlAs/GaMnAs single-barrier ferromagnetic semiconductor tunnel junctions grown on a (0 0 1) GaAs substrate by low-temperature molecular beam cpitaxy. The TMR ratio of 72% was obtained in a junction with a thin (1.6 nm) AlAs tunnel barrier when the magnetic held was applied along the [1 0 0] axis in the film plane. The TMR ratio was larger when the applied magnetic field direction was along [1 0 0 ], compared with other directions of [1 1 0] and [1 1 0]. Also, the TMR ratio was found to decrease with increasing the AlAs barrier thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/04/20 alle ore 04:27:46