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Titolo:
Ferromagnetism in a transition metal atom doped ZnO
Autore:
Sato, K; Katayama-Yoshida, H;
Indirizzi:
Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan Osaka Univ Ibaraki Osaka Japan 5670047 Res, Ibaraki, Osaka 5670047, Japan
Titolo Testata:
PHYSICA E
fascicolo: 1-3, volume: 10, anno: 2001,
pagine: 251 - 255
SICI:
1386-9477(200105)10:1-3<251:FIATMA>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
DILUTED MAGNETIC SEMICONDUCTOR; III-V SEMICONDUCTORS; THIN-FILMS; HETEROSTRUCTURES; (IN,MN)AS;
Keywords:
ZnO; transition metal; carrier induced ferromagnetism; transparent ferromagnet;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Sato, K Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan Osaka Univ 8-1 Mihogaoka Ibaraki Osaka Japan 5670047 670047, Japan
Citazione:
K. Sato e H. Katayama-Yoshida, "Ferromagnetism in a transition metal atom doped ZnO", PHYSICA E, 10(1-3), 2001, pp. 251-255

Abstract

Ferromagnetism in a 3d transition metal atom doped ZnO was investigated byab initio electronic structure calculations based on the local density approximation. It was shown that the anti-ferromagnetic state was stable in Mnatom doped ZnO and the ferromagnetic state was stable in the other transition metal, i.e., V, Cr, Fe, Co or Ni, doped ZnO, if no additional carrier dopant was introduced. Carrier induced ferromagnetism in the Mn atom doped ZnO was also investigated. The results showed that the ferromagnetism was induced by hole doping in the Mn atom doped ZnO. The present calculations will provide us with guidelines to produce ferromagnetic magnetic semiconductors and to control their magnetic state. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 07/04/20 alle ore 22:12:11