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Titolo:
Effect of light illumination on the process of magnetization reversal in carrier-induced ferromagnetic semiconductors
Autore:
Oiwa, A; Slupinski, T; Munekata, H;
Indirizzi:
Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, JapanKanagawa Acad Sci & Technol Kawasaki Kanagawa Japan 2130012 130012, Japan Tokyo Inst & Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst & Technol Yokohama Kanagawa Japan 2268503 agawa 2268503, Japan
Titolo Testata:
PHYSICA E
fascicolo: 1-3, volume: 10, anno: 2001,
pagine: 201 - 205
SICI:
1386-9477(200105)10:1-3<201:EOLIOT>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
III-V SEMICONDUCTORS; HETEROSTRUCTURES; (IN,MN)AS/(GA,AL)SB;
Keywords:
ferromagnetic semiconductors; carrier-induced magnetism; magnetization reversal;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Oiwa, A Kanagawa Acad Sci & Technol, Takatsu Ku, KSP E Bldg 309,3-2-1 Sakado, Kawasaki, Kanagawa 2130012, Japan Kanagawa Acad Sci & Technol KSP E Bldg 309,3-2-1 Sakado Kawasaki Kanagawa Japan 2130012
Citazione:
A. Oiwa et al., "Effect of light illumination on the process of magnetization reversal in carrier-induced ferromagnetic semiconductors", PHYSICA E, 10(1-3), 2001, pp. 201-205

Abstract

We have found the reduction in coercive force by the light illumination for carrier-induced ferromagnetic semiconductor heterostructure p-(In,Mn)As/GaSb grown by molecular beam epitaxy. This effect disappears when the photogenerated holes recombine with trapped electrons. This strongly suggests that the observed phenomenon is attributed to the carrier-induced magnetism. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 01:26:33