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Titolo:
Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemissionspectroscopy
Autore:
Okabayashi, J; Kimura, A; Rader, O; Mizokawa, T; Fujimori, A; Hayashi, T; Tanaka, M;
Indirizzi:
Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan Univ Tokyo Tokyo Japan 1130033 ept Phys, Bunkyo Ku, Tokyo 1130033, Japan Univ Tokyo, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan Univ Tokyo Tokyo Japan 1130033 i & Engn, Bunkyo Ku, Tokyo 1130033, Japan Hiroshima Univ, Dept Solid State Phys, Higashihiroshima 7398526, Japan Hiroshima Univ Higashihiroshima Japan 7398526 hihiroshima 7398526, Japan BESSY, D-12489 Berlin, Germany BESSY Berlin Germany D-12489BESSY, D-12489 Berlin, Germany Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1130033, Japan Univ Tokyo Tokyo Japan 1130033 ect Engn, Bunkyo Ku, Tokyo 1130033, Japan
Titolo Testata:
PHYSICA E
fascicolo: 1-3, volume: 10, anno: 2001,
pagine: 192 - 195
SICI:
1386-9477(200105)10:1-3<192:ESOGSB>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAAS; SEMICONDUCTORS;
Keywords:
Ga1-xMnxAs; photoemission spectroscopy; energy-band dispersion; density of states;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Okabayashi, J Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan Univ Tokyo Tokyo Japan 1130033 yo Ku, Tokyo 1130033, Japan
Citazione:
J. Okabayashi et al., "Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemissionspectroscopy", PHYSICA E, 10(1-3), 2001, pp. 192-195

Abstract

We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 08/04/20 alle ore 07:10:20