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Titolo:
Effect of Mn on the low temperature growth of GaAs and GaMnAs
Autore:
Tazima, M; Yamamoto, K; Okazawa, D; Nagashima, A; Yoshino, J;
Indirizzi:
Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan Tokyo Inst Technol Tokyo Japan 1528551 , Meguro Ku, Tokyo 1528551, Japan
Titolo Testata:
PHYSICA E
fascicolo: 1-3, volume: 10, anno: 2001,
pagine: 186 - 191
SICI:
1386-9477(200105)10:1-3<186:EOMOTL>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXY;
Keywords:
low temperature growth; GaAs; Mn; STM; RHEED;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
5
Recensione:
Indirizzi per estratti:
Indirizzo: Nagashima, A Tokyo Inst Technol, Dept Phys, Meguro Ku, 2-12-1 Oh Okayama, Tokyo 1528551, Japan Tokyo Inst Technol 2-12-1 Oh Okayama Tokyo Japan 1528551 pan
Citazione:
M. Tazima et al., "Effect of Mn on the low temperature growth of GaAs and GaMnAs", PHYSICA E, 10(1-3), 2001, pp. 186-191

Abstract

With the combined use of reflection high energy electron diffraction (RHEED) and scanning tunneling microscope, the growing surfaces of GaAs and GaMnAs were investigated. At the start of GaAs growth at low temperature similar to 250 degreesC, RHEED oscillation indicated larger growth rate, which decreased gradually to reach the constant value, identical to that for the high temperature growth. The shift in the growth rate depends on excess As coverage pre-adsorbed on the substrate. Mn addition lowered the degree of theshift and improved the epitaxy. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 15/07/20 alle ore 13:51:16