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Titolo:
Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well
Autore:
Unuma, T; Takahashi, T; Noda, T; Yoshita, M; Sakaki, H; Baba, M; Akiyama, H;
Indirizzi:
Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan Univ Tokyo ChibaJapan 2778581 st Solid State Phys, Chiba 2778581, Japan Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan Univ Tokyo Tokyo Japan 1068558 Ind Sci, Minato Ku, Tokyo 1068558, Japan
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 22, volume: 78, anno: 2001,
pagine: 3448 - 3450
SICI:
0003-6951(20010528)78:22<3448:EOIRAP>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRON-GAS; TRANSITIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Unuma, T Univ Tokyo, Inst Solid State Phys, 5-1-5 Kashiwanoha, Chiba 2778581, Japan Univ Tokyo 5-1-5 Kashiwanoha Chiba Japan 2778581 2778581, Japan
Citazione:
T. Unuma et al., "Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well", APPL PHYS L, 78(22), 2001, pp. 3448-3450

Abstract

We experimentally and theoretically study the effects of interface roughness and phonon scattering on intersubband absorption linewidth in a modulation-doped GaAs/AlAs quantum well. Quantitative comparisons between experimental results and theoretical calculations make it clear that interface roughness scattering is the dominant scattering mechanism for absorption linewidth in the temperature range below 300 K. Even at room temperature, phonon scattering processes contribute little to linewidth, while polar-optical phonon scattering limits electron mobility. (C) 2001 American Institute of Physics.

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Documento generato il 23/09/20 alle ore 11:13:58