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Titolo:
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation
Autore:
Pellegrino, P; Leveque, P; Wong-Leung, J; Jagadish, C; Svensson, BG;
Indirizzi:
Royal Inst Technol, SE-16440 Kista, Sweden Royal Inst Technol Kista Sweden SE-16440 Technol, SE-16440 Kista, Sweden Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia Australian Natl Univ Canberra ACT Australia 0200 rra, ACT 0200, Australia Univ Oslo, Phys Dept Phys Elect, N-0316 Oslo, Norway Univ Oslo Oslo Norway N-0316 , Phys Dept Phys Elect, N-0316 Oslo, Norway
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 22, volume: 78, anno: 2001,
pagine: 3442 - 3444
SICI:
0003-6951(20010528)78:22<3442:SOVAID>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
TRANSIENT SPECTROSCOPY; DOPANT DIFFUSION; IRRADIATION; REDUCTION; DEFECTS; TRAPS; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Pellegrino, P Royal Inst Technol, POB E229, SE-16440 Kista, Sweden Royal Inst Technol POB E229 Kista Sweden SE-16440 a, Sweden
Citazione:
P. Pellegrino et al., "Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation", APPL PHYS L, 78(22), 2001, pp. 3442-3444

Abstract

An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon-interstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV B-11 ions, the peak of the interstitial profile is displaced by similar to0.5 mum towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms. (C) 2001 American Institute of Physics.

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Documento generato il 04/12/20 alle ore 09:51:04