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Titolo:
The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures
Autore:
Rauscher, H;
Indirizzi:
Univ Ulm, Abt Oberflachenchem & Katalyse, D-89069 Ulm, Germany Univ Ulm Ulm Germany D-89069 lachenchem & Katalyse, D-89069 Ulm, Germany
Titolo Testata:
SURFACE SCIENCE REPORTS
fascicolo: 6-8, volume: 42, anno: 2001,
pagine: 207 -
SICI:
0167-5729(2001)42:6-8<207:TIOSWS>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; SCANNING-TUNNELING-MICROSCOPY; MOLECULAR-BEAM EPITAXY; ATOMIC-LAYER-EPITAXY; ENERGY-ELECTRON-DIFFRACTION; HYDROGEN-DESORPTION-KINETICS; LOW-TEMPERATURE GROWTH; GAS-SOURCE-MBE; VICINAL SI(001) SURFACES; DEPENDENT ADSORPTION-KINETICS;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
381
Recensione:
Indirizzi per estratti:
Indirizzo: Rauscher, H Univ Ulm, Abt Oberflachenchem & Katalyse, Albert Einstein Allee 47, D-89069 Ulm, Germany Univ Ulm Albert Einstein Allee 47 Ulm Germany D-89069 Germany
Citazione:
H. Rauscher, "The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures", SURF SCI R, 42(6-8), 2001, pp. 207

Abstract

This article gives an overview of the interaction of silanes with silicon single crystal surfaces at the atomic level. The various processes that lead to layer formation, including adsorption, dissociation via several intermediate steps, interaction of the dissociation products and island formation, as well as the formation of growth structures are discussed in detail. After a brief description of clean and hydrogen-covered silicon surfaces we turn to the interaction of silicon hydrides (SiH4, Si2H6, Si3H8) with Si(1 00)-(2 x 1) and Si(1 1 1)-(7 x 7), from adsorption to homoepitaxial layer formation. This is followed by a section on chlorosilanes, where we give particular attention to processes due to the presence of CI atoms in these molecules. The topographic information is discussed in correlation with the kinetics of precursor decomposition and island formation in these systems. The following section focuses on kinetic models for growth from precursor molecules. The predictions of those models are compared with experimental results. This article closes with a review of surface structures and processes associated with tetraethoxysilane and a variety of other substituted silanes. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/04/20 alle ore 17:56:50